BSS100 |
RFQ for BSS100 Required Field |
 |
| Technical/Catalog Information | BSS100 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 220mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 220mA, 10V |
| Input Capacitance (Ciss) @ Vds | 60pF @ 25V |
| Power - Max | 630mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 2nC @ 10V |
| Package / Case | TO-92 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSS100 BSS100 |
| Product | Manufacturers | Pack | D/C |
| BSS100 | - | TO-92 | 05+ |
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.
Features |
| ·BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V·High density cell design for extremely low RDS(ON).·Voltage controlled small signal switch.·Rugged and reliable. |
|
Symbol |
Parameter |
BSS100 |
BSS123 |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 20KW) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous ± 14 V - Non Repetitive (TP < 50 mS) |
± 14 |
V | |
|
± 20 | ||||
|
ID |
Drain Current - Continuous 0.22 0.17 A - Pulsed |
0.22 |
0.17 |
A |
|
0.9 |
0.68 | |||
|
PD |
Total Power Dissipation @ TA = 25°C |
0.63 |
0.36 |
W |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
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